| PART |
Description |
Maker |
| MPXC2011DT1 MPXC2012DT1 |
High Volume Sensor for Low Pressure Applications
|
MOTOROLA[Motorola, Inc]
|
| KA22134 |
DUAL PRE-POWER AMPLIFIER WITH DC VOLUME CONTROL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| CF1-1250-0470-1250A CF1-2500-1250-2500A CF1-0816-0 |
HIGH EFFICIENCY - LOW VOLUME - HIGH POWER - LOW WEIGHT
|
List of Unclassifed Manufacturers
ETC
|
| 2SK30ATM E001523 |
From old datasheet system
LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-DC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS
N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| ATS45C ATS45CS3 |
LOW-VOLTAGE ULTRA-LOW-POWER TEMPERATURE SENSOR WITH HIGH OUTPUT DRIVE
|
ETC
|
| TCD2560D |
IMAGE SENSOR-CCD, 4-6V, RECTANGULAR, THROUGH HOLE MOUNT
TOSHIBA CCD Image Sensor CCD (charge coupled device)
The TCD2560D is a high sensitive and low dark current 5400 elements 3 line CCD color image sensor which includes CCD drive circuit and clamp circuit.
|
TOSHIBA[Toshiba Semiconductor]
|
| TCD1501D |
CCD LINEAR IMAGE SENSOR The TCD1501D which includes sample .and .hold circuit is a high sensitive and low dark current 5000 elements CCD image sensor.
|
TOSHIBA
|
| TCD2558D |
IMAGE SENSOR-CCD, 5-7V, RECTANGULAR, THROUGH HOLE MOUNT
The TCD2558D is a high sensitive and low dark current 5340 elements 3 line CCD color image sensor which includes CCD drive circuit, clamp circuit.
TOSHIBA CCD Linear Image Sensor CCD (charge coupled device) 东芝防治荒漠化公约线性图像传感器CCD（电荷耦合器件
|
Toshiba Semiconductor
Toshiba, Corp.
|
| MRY1518E MRY1518ETA |
12.5msec High speed detection, 1.5mT High sensitivity CMOS MR Magnetic Sensor Switch
MR Sensor IC (Continuous Type)
|
AnaSem Hong Kong Limited
|
| 2SK3117 |
N CHANNEL MOS TYPE (LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| MMBT9014 |
PRE-AMPLIFIER, LOW LEVEL AND LOW NOISE NPN EPITAXIAL SILICON TRANSISTOR
|
Unisonic Technologies
|
